SPN2322-Dual N-Channel Enhancement Mode MOSFET DataSheet
The SPN2322 is the Dual N-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
•Power Managemen tin Notebook
•Battery Powered System
•LCD Display inverter