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发布者:来自网络 发布时间:2011/10/18 阅读:6431次    关键字: IC
SPC5604-N&P Pair Enhancement Mode MOSFET


SPC5604-N&P Pair Enhancement Mode MOSFET DataSheet

DESCRIPTION APPLICATIONS
    The SPC5604 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.

FEATURES 
   N-Channel
40V/10A,RDS(ON)= 24mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V
   P-Channel
-40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V
-40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  TO-252-5L package design

APPLICATIONS
  Power Management in Note book
  Battery Powered System
  DC/DC Converter
  LCD Display inverter

( TO-252-5L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 6.0V 4.5V 2.5V 25°C
V V V V A W
SPC5604 N 40 20 0.5 1 12 24   28   55 TO-252-5L

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