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发布者:来自网络 发布时间:2011/10/29 阅读:7247次    关键字: 2011深圳安博会
SPN80T10-N-Channel Enhancement Mode MOSFET


SPN80T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION 
   The SPN80T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN80T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES 
100V/100A,RDS(ON)=8.2mΩ@VGS=10V
HighdensitycelldesignforextremelylowRDS(ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L/TO-263-2L/PPAK5x6-8Lpackagedesign

APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch

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