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发布者:微桥 发布时间:2011/12/10 阅读:4460次    关键字: 赛威
SPN6562-Dual N-Channel Enhancement Mode MOSFET


SPN6562-Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN6562 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
􀂋 N-Channel
30V/2.8A,RDS(ON)= 60mΩ@VGS=10V
30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-23-6L package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( SOT-23-6L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPP6506 P 30 20 1 3 2.8 105 135     1.15 SOT-23-6L
P 30 20 1 3 2.8 105 135    
SPP6507 P 30 12 0.4 1 2.8   115 150 215 1.15 SOT-23-6L
P 30 12 0.4 1 2.8   115 150 215
SPN2622 N 20 12 0.4 1 4   80 100   1.15 SOT-23-6L
N 20 12 0.4 1 4   80 100  
SPN6561 N 30 20 1 3 2.8 60 80     1.15 SOT-23-6L
N 30 20 1 3 2.8 60 80    
SPN6562 N 30 12 0.8 1.6 2.8   75 105   1.15 SOT-23-6L
N 30 12 0.8 1.6 2.8   75 105  
SPN5002 N 500 20 1.75 3.25 0.025   250Ω 250Ω   1.3 SOT-23-6L
SPN2326 N 110 20 1 2.5 3.0 310  
SPP2327 P 110 20 1 2.5 1.5 650 750   1.15 SOT-23-6L

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