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发布者:微桥 发布时间:2011/12/10 阅读:6186次    关键字: PSR LED
SPN2326-N-Channel Enhancement Mode MOSFET


SPN2326-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN2326 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench
technology. The SPN2326 has been designed
specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES
 110V/1A,RDS(ON)= 310mΩ@VGS= 10V
 High density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOT-23-6L package design

APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch

( SOT-23-6L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPP6506 P 30 20 1 3 2.8 105 135     1.15 SOT-23-6L
P 30 20 1 3 2.8 105 135    
SPP6507 P 30 12 0.4 1 2.8   115 150 215 1.15 SOT-23-6L
P 30 12 0.4 1 2.8   115 150 215
SPN2622 N 20 12 0.4 1 4   80 100   1.15 SOT-23-6L
N 20 12 0.4 1 4   80 100  
SPN6561 N 30 20 1 3 2.8 60 80     1.15 SOT-23-6L
N 30 20 1 3 2.8 60 80    
SPN6562 N 30 12 0.8 1.6 2.8   75 105   1.15 SOT-23-6L
N 30 12 0.8 1.6 2.8   75 105  
SPN5002 N 500 20 1.75 3.25 0.025   250Ω 250Ω   1.3 SOT-23-6L
SPN2326 N 110 20 1 2.5 3.0 310  
SPP2327 P 110 20 1 2.5 1.5 650 750   1.15 SOT-23-6L

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