SPP1413A-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPP1413A is the P-Channel logic enhancementmode power field effect transistors are produced usinghigh cell density , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication such as cellular phone and notebookcomputer power management and other battery poweredcircuits where high-side switching , and low in-linepower loss are needed in a very small outline surfacemount package.

FEATURES
-20V/-3.4A,RDS(ON)= 130mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)= 150mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)= 190mΩ@VGS=-1.8VSuper high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-353 ( SC–70 ) package design

APPLICATIONS

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter