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发布者:微桥 发布时间:2012/10/19 阅读:9174次    关键字: LED
SPN8206-Dual N-Channel Enhancement Mode MOSFET


SPN8206-Common-Drain Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8206 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application,
notebook computer power management and other battery
powered circuits where high-side switching.

FEATURES
 20V/5.0A,RDS(ON)= 8.2mΩ@VGS= 4.5V
 20V/3.0A,RDS(ON)= 11.0mΩ@VGS= 2.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 ESD capability 2KV
 TDFN -6P package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( TDFN-6 )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPN8206 N 20 12 0.5 1.5 11 8.2 11   TDFN-6P

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