SPN125T04-N-Channel Enhancement Mode MOSFET DataSheet
The SPN125T04 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suitable for synchronous rectifier application,
Motor control power management and other Power Tool
circuits. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.
45V/125A, RDS(ON)= 4.5mΩ@VGS= 10V
45V/125A, RDS(ON)= 7.0mΩ@VGS= 4.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
TO-220-3L/TO-251/PPAK5x6 package design
SMPS Secondary Side Synchronous Rectifier