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发布者:来自网络 发布时间:2017-3-15 阅读:541次    关键字: MOS
SPN166T04-N-Channel Enhancement Mode MOSFET


SPN166T04-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN166T04 is the N-Channel logic
enhancement mode power field effect transistor
which is produced using super high cell density
DMOS trench technology. This high density
process is especially tailored to minimize
on-state resistance. These devices are
particularly suitable for synchronous rectifier
application, Motor control power management
and other Power Tool circuits. It has been
optimized for low gate charge, low RDS(ON) and
fast switching speed

FEATURES
 45V/166A, RDS(ON)=2.9mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 TO-220-3L/TO-251/TO-252/PPAK5x6 package design

APPLICATIONS
 DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier
 Motor Control
 Power Tool

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