SPC4606-N&P Pair Enhancement Mode MOSFET DataSheet
The SPC4606 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
•Power Managementin Notebook
•Battery Powered System
•LCD Display inverter