SPN11T10-N-Channel Enhancement Mode MOSFET  DataSheet
DataSheet
DESCRIPTION 
    The SPN11T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN05T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES 
 100V/8A, RDS(ON)= 120mΩ@VGS= 10V
 High density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 TO-252,TO-251 package design
APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch
