SPN6232-N-Channel Enhancement Mode MOSFET DataSheet
SPN6232DN3RGB (30V ) , DFN1.0x0.6 -3L(SOT-883) 封裝 , 用於通訊產品,小型化產品,隨身型產品等產品.
The SPN6232 is the N-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications
such as notebook computer power management and
other battery powered circuits where high-side switching,
low in-line power loss, and resistance to transients are needed.
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
DFN1.0x0.6-3L(SOT-883) package design
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers