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SPP1433A-P-Channel Enhancement Mode MOSFET


SPP1433A-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP1433A is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.

FEATURES 
􀂋 -30V/-2.8A,RDS(ON)=120mΩ@VGS=- 10V
􀂋 -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V
􀂋 -30V/-1.5A,RDS(ON)=165mΩ@VGS=-2.5V
􀂋 -30V/-1.0A,RDS(ON)=195mΩ@VGS=-1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-353 ( SC–70 ) package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter

( SOT-353 / SC-70-5L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPP1413A P 20 12 0.35 0.8 2.3   130 150 190 0.95 SOT-353  
SPP1433A P 30 12 0.4 1 2.3 120 135 165 195 0.95 SOT-353  
SPN1423A N 20 12 0.4 1 2.4   80 90 110 0.95 SOT-353  
SPN1443A N 30 12 0.8 1.6 2.4 95 105 135   0.95 SOT-353

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