SPC6333-N&P Pair Enhancement Mode MOSFET  DataSheet

DESCRIPTION
    The SPC6332 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
P-Channel-20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V
-20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V
-20V/0.25A,RDS(ON)=1500mΩ@VGS=-1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-363 (SC-70-6L)package design

APPLICATIONS

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter