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发布者:微桥 发布时间:2012/10/24 阅读:5081次    关键字: AC-DC
SPN8205W-Dual N-Channel Enhancement Mode MOSFET


SPN8205W-Common-Drain Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8205W is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .

FEATURES
􀂋 20V/5.0A,RDS(ON)= 24mΩ@VGS= 4.5V
􀂋 20V/3.0A,RDS(ON)= 34mΩ@VGS= 2.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TSSOP – 8P package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( TSSOP-8P )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPP8803 P 20 12 0.35 0.9 7   20 25 35 1.5 TSSOP-8P  
P 20 12 0.35 0.9 7   20 25 35
SPP8803B P 20 12 0.35 0.9 7   22 28 40 1.5 TSSOP-8P  
P 20 12 0.35 0.9 7   22 28 40
SPN8205W N 20 8 0.25 1 5   24 34 80 1.5 TSSOP-8P  
N 20 8 0.25 1 5   24 34 80
SPN8822 N 20 12 0.4 1 8   24 32 42 1.5 TSSOP-8P  
N 20 12 0.4 1 8   24 32 42
SPN8822A N 20 12 0.4 1 7.2   30 42   1.5 TSSOP-8P

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