SPN8668-N-Channel Enhancement Mode MOSFET DataSheet
The SPN8668 is the N-Channel logic enhancement modepower field effect transistors are produced using high celldensity, DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltage application,notebook computer power management andother battery powered circuits where highefficiency andfastswitchingis required.
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DC currentcapability