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发布者:来自网络 发布时间:2009/12/30 阅读:7978次   
SPN1022-Dual N-Channel Enhancement Mode MOSFET


SPN1022-ESD Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION APPLICATIONS
    The SPN1022 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
   N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOT-563 (SC-89-6L) package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( SOT-563 / SC-89-6L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A Ω Ω Ω Ω W
SPP1021 P 20 12 0.35 1.0 0.45   0.52 0.7 0.95 0.3 SOT-563  ESD
P 20 12 0.35 1.0 0.45   0.52 0.7 0.95
SPP1023 P 20 12 0.35 0.8 0.45   0.52 0.7 0.95 0.3 SOT-563  
P 20 12 0.35 0.8 0.45   0.52 0.7 0.95
SPN1022 N 20 12 0.35 1 0.65   0.38 0.45 0.8 0.35 SOT-563  ESD
N 20 12 0.35 1 0.65   0.38 0.45 0.8
SPN1024 N 20 12 0.35 1 0.65   0.38 0.45 0.8 0.35 SOT-563  
N 20 12 0.35 1 0.65   0.38 0.45 0.8
SPN1026 N 60 20 1 2.5 0.32 5 5.5     0.3 SOT-563  
N 60 20 1 2.5 0.32 5 5.5    
SPC1016 P 20 12 0.35 0.8 0.45   0.52 0.7 0.95 0.3 SOT-563  
N 20 12 0.35 1 0.65   0.38 0.45 0.8
SPC1018 P 20 12 0.35 1.0 0.45   0.52 0.7 0.95 0.3 SOT-563

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