微桥科技产品新闻动态管理发布系统 现在是
首页 ·公司动态 ·产品动态 ·原厂动态 ·行业动态 ·技术资料 ·LED驱动 ·DC-DC ·AC-DC ·MOSFET ·音频功放 ·电池管理 ·霍尔及马达驱动 ·其他 ·联系我们

当前位置:首页>>MOSFET>>Syncpower擎力 >>SPN230T06-N-Channel Enhancement Mode MOSFET    双击自动滚屏
发布者:来自网络 发布时间:2017/3/16 阅读:4864次    关键字: MOS
SPN230T06-N-Channel Enhancement Mode MOSFET


SPN230T06-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN230T06 is the N-Channel enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, Motor control power
management and other Power Tool circuits. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES
  60V/230A,RDS(ON)=2.5mΩ@VGS=10V
  High density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC currentcapability
  TO-220-3Land TO-263-2Lpackage design

APPLICATIONS
 AC/DC Synchronous Rectifier
 Load Switch
 UPS
 Power Tool
 Motor Control

本文共分 1

  • 上篇文章SPN180T10-N-Channel Enhancement Mode MOSFET
  • 下篇文章SPN340T06-N-Channel Enhancement Mode MOSFET
  •  
     

    版权所有 Copyright Micro Bridge Technology Co.,Ltd. All rights reserved.粤ICP备05065909号