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发布者:来自网络 发布时间:2017-3-16 阅读:49次    关键字: MOS
SPN4812-N-Channel Enhancement Mode MOSFET


SPN4812-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN4812 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
 100V/12A,RDS(ON)=12mΩ@VGS=10V
 100V/12A,RDS(ON)=15mΩ@VGS=4.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOP – 8P package design

APPLICATIONS
 DC/DC Converter
 Load Switch
 Synchronous Buck Converter
 SMPS Secondary Side Synchronous Rectifier
 Power Tool
 Motor Control

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