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发布者:来自网络 发布时间:2019/4/11 阅读:864次    关键字: MOS
SPN4816-N-Channel Enhancement Mode MOSFET


SPN4816-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN4816 is the N-Channel logic enhancement modepower field effect transistors
are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication,
notebook computer power management andother battery powered circuits where high-sideswitching.

FEATURES
100V/11.5A,RDS(ON)=12mΩ@VGS=10V
100V/9.5A,RDS(ON)=15.5mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOP–8package design

APPLICATIONS
DC/DC Converter
Load Switch
Synchronous Buck Converter
SMPS Secondary Side Synchronous Rectifier
Power Tool
Motor Control

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