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发布者:来自网络 发布时间:2019/4/11 阅读:659次    关键字: MOS
SPN68T10-N-Channel Enhancement Mode MOSFET


SPN68T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN68T10 is the N-Channel enhancement modepower field effect transistorwhich
isproduced using highcell density DMOS trench technology.
This high densityprocess is especially tailored to minimize on-stateresistance.
These devices are particularly suitableforsynchronous rectifierapplication,
Motor control powermanagement and other Power Tool circuits.
It has beenoptimized for low gate charge, lowRDS(ON)and fastswitching speed.

FEATURES
100V/68A,RDS(ON)=14mΩ@VGS=10V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
TO-220-3Land TO-252-2Lpackage design

APPLICATIONS
DC/DC Converter
Load Switch
SMPS SecondarySideSynchronous Rectifier
Power Tool
Motor Control

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