SPN2012-ESD N-Channel Enhancement Mode MOSFET DataSheet
TheSPN2012istheN-Channelenhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology.This high densityprocess is especially tailored to minimize on-stateresistanceand provide superior switching performance.These devices are particularly suited for low voltageapplicationssuch as notebook computer powermanagement and other battery powered circuitswherehigh-side switching, low in-line power loss, andresistance to transients are needed.
Super high density cell design for extremely lowRDS(ON)
Exceptional on-resistance and maximum DCcurrent capability
Power Management in Note book
Battery Powered System
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