SPN6232-N-Channel Enhancement Mode MOSFET DataSheet

SPN6232DN3RGB (30V ) , DFN1.0x0.6 -3L(SOT-883) 封裝 , 用於通訊產品,小型化產品,隨身型產品等產品.
 可以替代：
PMZ550UNE           (NXP)
DMN3730UFB         (Diodes)
AON1606                (AOS)
RV2C010UN-E         (ROHM)

DESCRIPTION
The SPN6232 is the N-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state
 resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications
such as notebook computer power management and
other battery powered circuits where high-side switching,
low in-line power loss, and resistance to transients are needed.

FEATURES
 N-Channel 30V/0.95A,RDS(ON)=400mΩ@VGS=4.5V
30V/0.75A,RDS(ON)=500mΩ@VGS=2.5V
30V/0.65A,RDS(ON)=650mΩ@VGS=1.8V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 DFN1.0x0.6-3L(SOT-883) package design

APPLICATIONS
 Drivers : Relays/Solenoids/Lamps/Hammers
 Power Supply Converter Circuits
 Load/Power Switching Cell Phones, Pagers