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发布者:微桥 发布时间:2010/1/9 阅读:7240次    关键字: PT4303
SPP1013-P-Channel Enhancement Mode MOSFET


SPP1013-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP1013 is the P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
􀂋 P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
􀂋 Super high density cell design for extremely low
RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-523 (SC-89) package design

APPLICATIONS
􀁺 Drivers : Relays/Solenoids/Lamps/Hammers
􀁺 Power Supply Converter Circuits
􀁺 Load/Power Switching Cell Phones, Pagers

( SOT-523 / SC-89-3L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPP1013 P 20 12 0.35 0.8 0.45   520 700 950 0.27 SOT-523  
SPP1015 P 20 12 0.35 1.0 0.45   520 700 950 0.27 SOT-523  ESD
SPN1012 N 20 12 0.35 1 0.65   380 450 800 0.27 SOT-523  
SPN1014 N 20 12 0.35 1 0.65   380 450 800 0.27 SOT-523  ESD

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