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发布者:来自网络 发布时间:2010/1/14 阅读:4259次    关键字: 電子書
SPP7401-P-Channel Enhancement Mode MOSFET


SPP7401-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP7401 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.

FEATURES 
􀂋 -30V/-2.8A,RDS(ON)=115mΩ@VGS=- 10V
􀂋 -30V/-2.5A,RDS(ON)=125mΩ@VGS=-4.5V
􀂋 -30V/-1.5A,RDS(ON)=170mΩ@VGS=-2.5V
􀂋 -30V/-1.0A,RDS(ON)=240mΩ@VGS=-1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-323 ( SC–70 ) package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter

( SOT-323 / SC-70-3L )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPP1305 P 20 12 0.35 0.8 1   280 380 530 0.33 SOT-323  
SPP1413 P 20 12 0.5 1.8 2.9 130 150     0.33 SOT-323  
SPP7407 P 20 12 0.35 0.8 2.3   100 125 170 0.33 SOT-323  
SPP1433 P 30 20 1 3 2.8 110 140     0.33 SOT-323  
SPP7401 P 30 12 0.4 1 2.8 115 135 170 240 0.33 SOT-323  
SPN1304 N 20 12 0.35 1 2   225 315 425 0.33 SOT-323  
SPN1423 N 20 12 0.45 1.2 2.8   90 100   0.33 SOT-323  
SPN7402 N 20 12 0.35 0.85 2.4   65 80 95 0.33 SOT-323  
SPN1443 N 30 20 1 3 2.8 65 90     0.33 SOT-323  
SPN7400 N 30 12 0.8 1.6 2.8 77 85 110   0.33 SOT-323  
SPN7002U N 60 20 1 2.5 0.64 2000 4000   0.33 SOT-323  
SPN1306 N 30 12 0.35 1.0 0.65 550 650  850 0.33 SOT-323

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