微桥科技产品新闻动态管理发布系统 现在是
首页 ·公司动态 ·产品动态 ·原厂动态 ·行业动态 ·技术资料 ·LED驱动 ·DC-DC ·AC-DC ·MOSFET ·音频功放 ·电池管理 ·霍尔及马达驱动 ·其他 ·联系我们

当前位置:首页>>MOSFET>>Syncpower擎力 >>SPN8852-N-Channel Enhancement Mode MOSFET   双击自动滚屏
发布者:来自网络 发布时间:2019/4/23 阅读:3751次    关键字: MOS
SPN8852-N-Channel Enhancement Mode MOSFET


SPN8852-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where  high-side switching .


FEATURES
150V/4.1A,RDS(ON)=88mΩ@VGS=10V
150V/2A,RDS(ON)=100mΩ@VGS=4.5V
SuperhighdensitycelldesignforextremelylowRDS(ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
PPAK5x6-8Lpackagedesign

APPLICATIONS
DC/DCConverter
LoadSwitch
SynchronousBuckConverter
SMPSSecondarySideSynchronousRectifier
PowerTool
MotorControl

本文共分 1

  • 上篇文章SPN2N7002K-N-Channel Enhancement Mode MOSFET(ESD)
  • 下篇文章SPP6241-P-Channel Enhancement Mode MOSFET
  •  
     

    版权所有 Copyright Micro Bridge Technology Co.,Ltd. All rights reserved.粤ICP备05065909号