微桥科技产品新闻动态管理发布系统 现在是
首页 ·公司动态 ·产品动态 ·原厂动态 ·行业动态 ·技术资料 ·LED驱动 ·DC-DC ·AC-DC ·MOSFET ·音频功放 ·电池管理 ·霍尔及马达驱动 ·其他 ·联系我们

当前位置:首页>>MOSFET>>Syncpower擎力 >>SPN65T10-N-Channel Enhancement Mode MOSFET   双击自动滚屏
发布者:来自网络 发布时间:2011/10/26 阅读:5736次    关键字: 电源
SPN65T10-N-Channel Enhancement Mode MOSFET


SPN65T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN65T10 is the N-Channel enhancement mode
power field effect transistor which is produced using high
cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, notebook computer
power management and other battery powered circuits.

FEATURES 
100V/65A,RDS(ON)=14mΩ@VGS=10V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC currentcapability
TO-220-3L/TO-263-2L/TO-252-2Lpackage design

APPLICATIONS
 DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier

本文共分 1

  • 上篇文章华润矽威锂电保护系列IC
  • 下篇文章SPP8805-Dual P-Channel Enhancement Mode MOSFET
  •  
     

    版权所有 Copyright Micro Bridge Technology Co.,Ltd. All rights reserved.粤ICP备05065909号