SPP3401B-P-Channel Enhancement Mode MOSFET DataSheet
The SPP3401B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
-30V/-4.0 A,RDS(ON)= 70mΩ@VGS=-10V
-30V/-3.2 A,RDS(ON)= 90mΩ@VGS=-4.5V
-30V/-1.2 A,RDS(ON)= 115mΩ@VGS=-2.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
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