SPN2318-N-Channel Enhancement Mode MOSFET DataSheet
The SPN2318 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
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