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SPN8457-N-Channel Enhancement Mode MOSFET


SPN8457-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN8457 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES 
􀂋 30V/5.5A,RDS(ON)= 58mΩ@VGS=10V
􀂋 30V/4.0A,RDS(ON)= 98mΩ@VGS=4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-223 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 DC/DC Converter
􀁺 LCD Display inverter

( SOT-223 )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPN8439 N 30 12 0.8 1.6 5.8   42 54   2.8 SOT-223  
SPN8457 N 30 20 1 3 5.8 58 98     2.8 SOT-223  
SPN8902 N 100 20 1 2.5 2.2 330 350   2.8 SOT-223

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