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发布者:来自网络 发布时间:2010/12/2 阅读:6458次    关键字: 数码相机 消费电子 投影仪 微桥
SPN8902-N-Channel Enhancement Mode MOSFET


SPN8902-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8902 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES 
  100V/2A, RDS(ON)= 330mΩ@VGS= 10V
   High density cell design for extremely low RDS (ON)
   Exceptional on-resistance and maximum DC current capability
   SOT-223 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 DC/DC Converter
􀁺 LCD Display inverter

( SOT-223 )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPN8439 N 30 12 0.8 1.6 5.8   42 54   2.8 SOT-223  
SPN8457 N 30 20 1 3 5.8 58 98     2.8 SOT-223  
SPN8902 N 100 20 1 2.5 2.2 330 350   2.8 SOT-223

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