微桥科技产品新闻动态管理发布系统 现在是
首页 ·公司动态 ·产品动态 ·原厂动态 ·行业动态 ·技术资料 ·LED驱动 ·DC-DC ·AC-DC ·MOSFET ·音频功放 ·电池管理 ·霍尔及马达驱动 ·其他 ·联系我们

当前位置:首页>>MOSFET>>Syncpower擎力 >>SPN8902-N-Channel Enhancement Mode MOSFET   双击自动滚屏
发布者:来自网络 发布时间:2010/12/2 阅读:4489次    关键字: 数码相机 消费电子 投影仪 微桥
SPN8902-N-Channel Enhancement Mode MOSFET


SPN8902-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8902 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES 
  100V/2A, RDS(ON)= 330mΩ@VGS= 10V
   High density cell design for extremely low RDS (ON)
   Exceptional on-resistance and maximum DC current capability
   SOT-223 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 DC/DC Converter
􀁺 LCD Display inverter

( SOT-223 )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C
V V V V A W
SPN8439 N 30 12 0.8 1.6 5.8   42 54   2.8 SOT-223  
SPN8457 N 30 20 1 3 5.8 58 98     2.8 SOT-223  
SPN8902 N 100 20 1 2.5 2.2 330 350   2.8 SOT-223

本文共分 1

  • 上篇文章PT5321-带3D增强立体声音效功能的双模式2.2W音频功率放大器
  • 下篇文章SPN8910-N-Channel Enhancement Mode MOSFET
  •  
     

    版权所有 Copyright Micro Bridge Technology Co.,Ltd. All rights reserved.粤ICP备05065909号