SPN8902-N-Channel Enhancement Mode MOSFET DataSheet
The SPN8902 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
100V/2A, RDS(ON)= 330mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-223 package design
Power Management in Note book
LCD Display inverter