SPN2012-N-Channel Enhancement Mode MOSFET(ESD)

SPN2012-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
TheSPN2012istheN-Channelenhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology.This high densityprocess is especially tailored to minimize on-stateresistanceand provide superior switching performance.These devices are particularly suited for low voltageapplicationssuch as notebook computer powermanagement and other battery powered circuitswherehigh-side switching, low in-line power loss, andresistance to transients are needed.

FEATURES
N-Channel
20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V
Super high density cell design for extremely lowRDS(ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-23package design

APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter