SPP3421-P-Channel Enhancement Mode MOSFET  DataSheet 
DESCRIPTION     The SPP3421 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.     This high density process is especially tailored to minimize on-state resistance.     These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. 
FEATURES  -60V/-5A,RDS(ON)= 150mΩ@VGS=-10V  -60V/-2.5A,RDS(ON)= 185mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design 
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter 
  
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