微桥科技产品新闻动态管理发布系统 现在是
首页 ·公司动态 ·产品动态 ·原厂动态 ·行业动态 ·技术资料 ·LED驱动 ·DC-DC ·AC-DC ·MOSFET ·音频功放 ·电池管理 ·霍尔及马达驱动 ·其他 ·联系我们

当前位置:首页>>MOSFET>>Syncpower擎力 >>SPN68T10-N-Channel Enhancement Mode MOSFET   双击自动滚屏
发布者:来自网络 发布时间:2019/4/11 阅读:3940次    关键字: MOS
SPN68T10-N-Channel Enhancement Mode MOSFET


SPN68T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN68T10 is the N-Channel enhancement modepower field effect transistorwhich
isproduced using highcell density DMOS trench technology.
This high densityprocess is especially tailored to minimize on-stateresistance.
These devices are particularly suitableforsynchronous rectifierapplication,
Motor control powermanagement and other Power Tool circuits.
It has beenoptimized for low gate charge, lowRDS(ON)and fastswitching speed.

FEATURES
100V/68A,RDS(ON)=14mΩ@VGS=10V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
TO-220-3Land TO-252-2Lpackage design

APPLICATIONS
DC/DC Converter
Load Switch
SMPS SecondarySideSynchronous Rectifier
Power Tool
Motor Control

本文共分 1

  • 上篇文章SPN8810-N-Channel Enhancement Mode MOSFET
  • 下篇文章SPN4816-N-Channel Enhancement Mode MOSFET
  •  
     

    版权所有 Copyright Micro Bridge Technology Co.,Ltd. All rights reserved.粤ICP备05065909号