SPP3413W-P-Channel Enhancement Mode MOSFET DataSheet
The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
-20V/-3.4 A,RDS(ON)= 95mΩ@VGS=-4.5V
-20V/-2.4 A,RDS(ON)= 120mΩ@VGS=-2.5V
-20V/-1.7 A,RDS(ON)= 145mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
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