SPN3632-N-Channel Enhancement Mode MOSFET DataSheet
The SPN3632 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
100V/80A,RDS(ON)= 8.5mΩ@VGS= 10V
100V/40A,RDS(ON)= 9.8mΩ@VGS= 6.0V
100V/10A,RDS(ON)= 10mΩ@VGS= 4.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
TO-220-3L package design
SMPS Secondary Side Synchronous Rectifier