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 SPN2302D-N-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode
 power field effect transistors are produced using high cell
 density , DMOS trench technology.
 This high density process is especially tailored to
 minimize on-state resistance.
 These devices are particularly suited for low voltage
 application such as cellular phone and notebook
 computer power management and other battery powered
 circuits, and low in-line power loss are needed in a very
 small outline surface mount package.
 FEATURES 20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V
 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOT-23 package design
 APPLICATIONS Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter
 
 
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