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发布者:来自网络 发布时间:2011/10/20 阅读:5285次    关键字: LED驱动电源
SPN3632-N-Channel Enhancement Mode MOSFET


SPN3632-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN3632 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES 
􀂋 100V/80A,RDS(ON)= 8.5mΩ@VGS= 10V
􀂋 100V/40A,RDS(ON)= 9.8mΩ@VGS= 6.0V
􀂋 100V/10A,RDS(ON)= 10mΩ@VGS= 4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TO-220-3L package design

APPLICATIONS
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 SMPS Secondary Side Synchronous Rectifier

( TO-220 )
Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note
Min Max 25°C 10V 6.0V 4.5V 2.5V 25°C
V V V V A W
SPN6098 N 60 20 1 2.5 60 12   15   62 TO-220-3L  
SPN6099 N 60 20 1 2.5 80 4 4.2 4.4   62 TO-220-3L  
SPN7575 N 75 20 2 4 90 12       62 TO-220-3L  
SPN9507 N 75 20 2 4 80 5       62 TO-220-3L  
SPN3632 N 100 20 2 4 80 8.5   10   62 TO-220-3L  
SPN7510 N 100 20 1 3 72 16   21   62 TO-220-3L  
SPN10T10 N 100 20 1 3 9 160       62 TO-220F-3L  
SPN65T10 N 100 20 2.0 4.0 68 14.0       62 TO-220-3L
SPN50T10 N 100 20 2.0 4.0 65 18       62 TO-220-3L
SPN80T10 N 100 20 2.0 4.0 85 7.1       62 TO-220-3L

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