SPP4435-P-Channel Enhancement Mode MOSFET DataSheet
The SPP4435 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
-30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOP – 8P package design
Power Management in Note book
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