SPN4850-N-Channel Enhancement Mode MOSFET DataSheet 停产 替代型号SPN4436
The SPN4850 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
60V/7.2A,RDS(ON)= 27mΩ@VGS= 10V
60V/6.8A,RDS(ON)= 32mΩ@VGS= 4.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOP – 8P package design