SPN4992-Dual N-Channel Enhancement Mode MOSFET DataSheet
The SPN4992is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
100V/2A, RDS(ON)= 180mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOP-8 package design
Power Management in Note book
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