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 SPN4972B-Dual N-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTIONThe SPN4972B is the Dual N-Channel logic enhancement
 mode power field effect transistors are produced using
 high cell density , DMOS trench technology.
 This high density process is especially tailored to
 minimize on-state resistance.
 These devices are particularly suited for low voltage
 application , notebook computer power management and
 other battery powered circuits where high-side
 switching .
 FEATURES 30V/9A,RDS(ON)= 17mΩ@VGS= 10V
  30V/8A,RDS(ON)= 20mΩ@VGS= 4.5V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOP – 8P package design
 APPLICATIONS Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter
 
 
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